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2-μm InGaSb/AlGaAsSb multiple-quantum-well light-emitting diodes

Withers, N.J.,Hongjun Cao,Smolyakov, G.A.,Kaspi, Ron

Long Beach, CA（2006）

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Abstract
We report fabrication and characterization of light-emitting diodes operating at room temperature with a peak wavelength of ~2.0 mum by using heterostructures of InGaSb/AlGaAsSb quantum wells grown by molecular beam epitaxy on GaSb substrates.
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Key words
III-V semiconductors,aluminium compounds,gallium arsenide,gallium compounds,indium compounds,light emitting diodes,molecular beam epitaxial growth,optical fabrication,quantum well devices,semiconductor epitaxial layers,semiconductor growth,semiconductor quantum wells,GaSb,InGaSb-AlGaAsSb,LED fabrication,heterostructure semiconductor quantum wells,molecular beam epitaxial growth,multiple-quantum-well light-emitting diodes characterization,temperature 293 K to 298 K,wavelength 2 mum,(230.3670) Light-emitting diodes,(230.5590) Quantum-well devices,
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