Fabricating GaN-based LEDs with V-shape sapphire facet mirror by double transferred scheme

Y J Lee,T C Lu,H C Kuo,S C Wang, J M Hwang,T C Hsu,M H Hsieh,M J Jou

Long Beach, CA（2006）

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摘要

GaN-based LEDs with V-shape sapphire facet reflectors were fabricated using a double transferred scheme. It is demonstrated the {1-102} R-plane V-shape facet reflector with high slope of 57deg has the superior efficiency for light extraction.

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关键词

iii-v semiconductors,gallium compounds,light emitting diodes,wide band gap semiconductors,al2o3,gan,led fabrication,v-shape sapphire facet mirror,double transferred scheme,light extraction,(230.3670),wet etching,refractive index,fabrication,power generation,led lamps

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