Memristor Crossbar Based Programmable Interconnects
VLSI（2014）
摘要
The memristor is a novel non-volatile device having a large variable resistance range. Physical memristors can be laid out in a high density grid known as a crossbar. In this paper we propose a memristor crossbar based static routing switch design. We logically connect two wires within a crossbar by setting their corresponding cross-point memristor to a low resistance state. Conversely we logically disconnect the wires by setting the corresponding memristor to a high resistance state. Our evaluations show that the proposed static switch consumes extremely low power and has a high density compared to existing designs.
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关键词
field programmable gate arrays,integrated circuit interconnections,integrated memory circuits,low-power electronics,memristors,random-access storage,field programmable gate array,low power switch,memristor crossbar based programmable interconnects,nonvolatile device,resistance state,static routing switch design,FPGA,On-chip routing,memristor,routing switch,static routing,
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