A compact model of channel electron mobility for nano scale strained-Si nMOSFET

Shanghai（2008）

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摘要

A compact model of channel electron mobility for strained-silicon is suggested in this paper. The model can be used for nano scale simulation since thin-film quantum confinement is considered. It is suitable for <100>/<110> channel nMOSFET.

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关键词

mosfet,electron mobility,elemental semiconductors,semiconductor device models,silicon,si,channel electron mobility,nmosfet,strained-silicon,thin-film quantum confinement,strained silicon,nanoelectronics

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