Modelling of the susceptibility of 90 nm input output buffer

A Boyer,M Fer,Lionel Courau,Etienne Sicard,S Bendhia

Singapore（2008）

Cited 4|Views4

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Abstract

This paper deals with the modelling of the susceptibility to RF aggression of several input buffers structures implemented in a 90 nm test-chip. Measurement results, model construction and simulation flow are detailed.

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Key words

buffer circuits,integrated circuits,radiofrequency interference,rf aggression,input output buffer,susceptibility,ic,input-output buffer,susceptibility measurement and modeling,input output,chip,predictive models,impedance,packaging,cmos technology,electromagnetic compatibility,capacitors,impedance measurement

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