Challenges in 65nm Poly, RX and STI Defect Learning

Chienfan Yu,Javier Ayala,C Tran,J Gay,Anthony Santiago, Eric Meyette, Elizabeth Hampton,Garrett W Oakley,Kenneth Bandy, Timothy M Mccormack,Rajasekhar Venigalla, F W Scholl

Cambridge, MA（2008）

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摘要

During manufacturing transitioning from 90 nm to 65 nm node in IBM's 300 mm fab, FEOL (front end of line) defect pareto shifted as a result of the changes in integration scheme. By combining the optically based in-line inspection and electrical kerf test, key yield detractors were identified and addressed. Not all optically detected defects are true killers. Wafer functional test and physical failure analysis provided the ultimate determination for the significance of detractors.

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关键词

inspection,masks,semiconductor device manufacture,rx,sti defect learning,electrical kerf test,front end of line defect pareto,integration scheme,key yield detractors,micromasking,optical in-line inspection,resists,front end,testing,strips,functional testing,hardware,failure analysis,silicon

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