6.2 Å Sb-based pN diodes for high frequency applications

Sb-based heterojunction bipolar transistors on semi-insulating GaAs at a = 6.2 Aring consisting of narrow bandgap, p-type In0.27Ga0.73Sb and wide bandgap, n-type In0.69Al0.31As0.41Sb0.59 are demonstrated for the first time. The transistors exhibit excellent current-voltage characteristics. The individual diodes show good forward and reverse operation with saturation current densities and idealities for both the base-emitter and base-collector junctions of 7 mA/cm2 and 1.3 and 14 mA/cm2 and 1.25, respectively, and a reverse leakage current below 3 A/cm2 (up to -3 V) for the base-collector junction. Additionally, the transistors display common-emitter current gains up to 20 with common-emitter breakdown voltages of approximately 3 V.