Demonstration of 10 kV, 50A 4H-SiC DMOSFET with stable subthreshold characteristics across 25–200 °C operating temperatures

Robert S. Howell,Steven Buchoff,Stephen Van Campen,Ty Mcnutt,Bettina Nechay,Marc Sherwin, Ranbir Singh

College Park, MD（2007）

Cited 2|Views7

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Abstract

This paper has described the fabrication and demonstration of 10 kV SiC MOSFETs, with active areas of 0.15 cm2 and 0.61 cm2, capable of operating at 5-10 A and 20-50 A respectively, and demonstrating excellent, stable subthreshold characteristics as a function of operating temperature (<200 degC ). These large area SiC DMOSFETs and their promising characteristics are excellent candidates to realize high voltage high speed solid state switching applications.

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Key words

field effect transistor switches,power semiconductor switches,silicon compounds,4h-sic dmoset,sic,current 50 a,solid state switching applications,stable subthreshold characteristics,temperature 25 degc to 200 degc,voltage 10 kv,high voltage

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