Reliability of Strained-Channel NMOSFETs with SiN Capping Layer on Hi-Wafers with a Thin LPCVD-TEOS Buffer Layer
2007 International Semiconductor Device Research Symposium（2007）
Key words
MOSFET,annealing,chemical vapour deposition,crystal defects,crystal growth from melt,semiconductor device reliability,semiconductor growth,silicon compounds,surface roughness,Czochralski wafers,NMOSFET reliability,SiN,capping layer,hydrogen annealing,local strained channel technique,microroughness,oxygen defects,surface defect,tensile strained channel,thin LPCVD-TEOS buffer layer
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