Impacts of a Buffer Layer and Hi-Wafers on the Performance of Strained-Channel NMOSFETs with SiN Capping Layer
2007 International Semiconductor Device Research Symposium（2007）
Key words
MOSFET,buffer layers,chemical vapour deposition,passivation,wafer bonding,Cz-wafer,Hi-wafer,SiN capping layer,local strained channel technique,low-pressure chemical vapour deposition,passivation layer deposition,size 300 nm,strained-channel nMOSFET,thin LPCVD-TEOS buffer layer
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