High-Speed InP HBT Technology for Advanced Mixed-signal and Digital Applications

C Monier,D Scott,M Damore,B Chan,L Dang,A Cavus,E Kaneshiro,P S Nam,K Sato, Nir Cohen, Shan Lin,Kevin Luo,J J Wang,B Oyama,A Gutierrez

Washington, DC（2007）

Cited 22|Views11

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Abstract

The need for higher performance electronics for space and defense applications has driven the development of InP heterojunction technologies. An advanced high-speed sub-micron InP double heterojunction bipolar transistor (DHBT) technology, using a 4-level front side metal interconnect along with a robust backside process has been developed to provide scaling and manufacturing capabilities for mixed-signal and digital applications of increased complexity. State-of-the-art circuits with significant improvements in resolution and bandwidth are reported.

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Key words

heterojunction bipolar transistors,interconnections,hbt technology,double heterojunction bipolar transistor,metal interconnect,state-of-the-art circuits

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