High-Speed InP HBT Technology for Advanced Mixed-signal and Digital Applications
Washington, DC(2007)
Abstract
The need for higher performance electronics for space and defense applications has driven the development of InP heterojunction technologies. An advanced high-speed sub-micron InP double heterojunction bipolar transistor (DHBT) technology, using a 4-level front side metal interconnect along with a robust backside process has been developed to provide scaling and manufacturing capabilities for mixed-signal and digital applications of increased complexity. State-of-the-art circuits with significant improvements in resolution and bandwidth are reported.
MoreTranslated text
Key words
heterojunction bipolar transistors,interconnections,hbt technology,double heterojunction bipolar transistor,metal interconnect,state-of-the-art circuits
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined