Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs

Shuji Nakamura,Steven P Denbaars,James S Speck,Mathew C Schmidt,K C Kim,Robert M Farrell,Daniel F Feezell,D A Cohen,M Saito,Hiroyasu Sato,Hirokuni Asamizu,A K Tyagi,Hong Zhong,Hisashi Masui,Natalie N Fellows,Michael Iza, Taeko Hashimoto,Kenji Fujito

Lake Buena Vista, FL（2007）

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Abstract

Violet InGaN/GaN light emitting diodes (LEDs) was fabricated on semipolar GaN bulk substrates. The output power and external quantum efficiency at a driving current of 20 mA were measured. The first nonpolar m-plane nitride laser diodes (LDs) were realized on low extended defect bulk m-plane GaN substrates.

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Key words

iii-v semiconductors,gallium compounds,light emitting diodes,semiconductor lasers,wide band gap semiconductors,gan,led,driving current,extended defect,external quantum efficiency,nonpolar m-plane nitride laser diodes,output power,violet light emitting diodes,light emitting diode

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