A 2.4GHz Fully Integrated Transmitter Front End with +26.5-dBm On-Chip CMOS Power Amplifier

Pochih Wang,Chiajun Chang,Weiming Chiu,Peiju Chiu,Chuncheng Wang,C Lu,Kaite Chen,M Huang,Yiming Chang,Shihmin Lin,K Chan,Yinghis Lin,Chaocheng Lee

Radio Frequency Integrated Circuits（2007）

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摘要

A fully integrated transmitter front end with on-chip power amplifier (PA) in 0.18 um CMOS technology is presented. The on-chip PA employs dynamic bias technique to reduce power consumption and enhance linearity. In the measurement, it reveals the output PldB of the PA is 26.5 dBm. Also, the transmitter delivers an average power of 17.3 dBm with EVM of -28.1 while drawing 225 mA of DC current (PA 157 mA) from 3.3 V supply. The low power consumption, adequate linearity and high integration make this transmitter suitable for WLAN application.

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关键词

cmos integrated circuits,power amplifiers,system-on-chip,wireless lan,wlan application,current 225 ma,dynamic bias technique,frequency 2.4 ghz,integrated transmitter front end,on-chip cmos power amplifier,power consumption,size 0.18 mum,voltage 3.3 v,cmos technology,power amplifiers.,transmitter,radio transmitters,front end,ofdm modulation,linearity,power amplifier,baseband,chip,power generation,system on chip

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