InP-HEMT-TIA with Differential Optical Input Using Vertical High Topology Pin-Diodes

I Nannen,A Poloczek,A Matiss,W Brockerhoff,I Regolin,F J Tegude

Matsue（2007）

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摘要

A monolithically integrated combination of high electron mobility transistors and high responsivity (1.0 A/W) vertical pin-diodes have been used in optical synchronous quadrature phase-shift keying transimpedance amplifier design for 40 Gbit/s transmission.

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关键词

iii-v semiconductors,high electron mobility transistors,indium compounds,integrated optoelectronics,optical communication equipment,optical design techniques,optical fibre communication,p-i-n photodiodes,quadrature phase shift keying,hemt-tia,inp,differential optical input,monolithically integrated device,optical synchronous quadrature phase-shift keying,transimpedance amplifier design,vertical high-topology pin-diodes,optical amplifiers,transimpedance amplifier,high electron mobility transistor,topology,phase shift keying,stimulated emission,electron optics

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