InP-HEMT-TIA with Differential Optical Input Using Vertical High Topology Pin-Diodes
Matsue(2007)
摘要
A monolithically integrated combination of high electron mobility transistors and high responsivity (1.0 A/W) vertical pin-diodes have been used in optical synchronous quadrature phase-shift keying transimpedance amplifier design for 40 Gbit/s transmission.
更多查看译文
关键词
iii-v semiconductors,high electron mobility transistors,indium compounds,integrated optoelectronics,optical communication equipment,optical design techniques,optical fibre communication,p-i-n photodiodes,quadrature phase shift keying,hemt-tia,inp,differential optical input,monolithically integrated device,optical synchronous quadrature phase-shift keying,transimpedance amplifier design,vertical high-topology pin-diodes,optical amplifiers,transimpedance amplifier,high electron mobility transistor,topology,phase shift keying,stimulated emission,electron optics
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要