Smallest Bit-Line Contact of 76nm Pitch on NAND Flash Cell by Using Reversal PR (photo Resist) and SADP (Self-Align Double Patterning) Process
2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC)（2007）
关键词
NAND circuits,contact resistance,flash memories,leakage currents,photoresists,NAND flash cell,active area force reduction,contact-resistance minimization,junction leakage current suppression,reversal photoresist,self-align double patterning process
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