Spin Transfer Switching in sub-100nm Magnetic Tunnel Junctions

When injected spin polarized electrons interact with the magnetic moment of a free layer, their angular momentum becomes transferred to the free layer. If sufficient current is applied, the exerted torque switches the free layer either parallel or anti-parallel to the pinned layer depending on the direction of flow of the current. This type of localized current switching is attractive for an MRAM application. This paper focuses on the fabrication and characterization of sub-100nm spin-transfer switching devices. These fabricated tunnel junctions were characterized at room temperature with a quasi-static electrical measurement setup.