Automatic Extraction Methodology for Accurate Measurements of Effective Channel Length on 65-nm MOSFET Technology and Below

IEEE Transactions on Semiconductor Manufacturing(2008)

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摘要
The length of MOSFET channels is an important circuit design parameter, and this paper focuses on a new industrially-compatible technique using gate-to-channel measurements Cgc(Vg) to provide accurate extraction of the channel length. Thanks to fully-automatic probers, the technique provides large scale extractions and so, statistical-based results can be extracted with a maximized reliability. An...
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关键词
Length measurement,MOSFET circuits,Parasitic capacitance,Monitoring,Testing,Microelectronics,Photonics,Electrical resistance measurement,Current measurement,Strain measurement
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