A Quantum–Mechanical View on the Capacitance of a Silicon p-n Junction

Electron Device Letters, IEEE(2007)

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摘要
We have calculated the capacitance of a silicon p-n junction from a self-consistent solution to the effective-mass Schroumldinger and Poisson equations. Although the p-n product and the charge distribution deviate strongly from the semiclassical calculations, the quantum mechanically calculated capacitance of the silicon p-n junction differs only weakly from the semiclassical result. We show that the deviation from the semiclassical result can be approximated as band-gap narrowing in the quasi-neutral regions due to the exchange-energy term in the effective-mass Schroumldinger equation
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Poisson equation,Schrodinger equation,capacitance,effective mass,elemental semiconductors,p-n junctions,quantum Hall effect,silicon,Poisson equations,Si,band-gap narrowing,charge distribution,effective-mass Schrodinger equation,exchange-energy term,p-n junction,quantum effect,quantum-mechanical capacitance,quasi-neutral regions,self-consistent solution,semiconductor devices,Capacitance,diode,modeling,quantum effect semiconductor devices,tunneling
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