Electrical and Memory Properties of Non-volatile Memory Structures with Embedded Si Nanocrystals
Smolenice Castle(2006)
Abstract
Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control layer and a SiO2 or a Si3N4 tunnel layer. It was obtained that the charging behaviour of structures with SiO2 tunnel layer was better than with Si3N4 tunnel layer
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Key words
chemical vapour deposition,elemental semiconductors,nanostructured materials,random-access storage,silicon,silicon compounds,si3n4,sio2,electrical properties,embedded nanocrystals,low pressure chemical vapour deposition,memory properties,nonvolatile memory structures,non volatile memory
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