Electrical and Memory Properties of Non-volatile Memory Structures with Embedded Si Nanocrystals

Zs J Horvath,P Basa,T Jaszi,A E Pap,P Szollosi,K Nagy, V Hardy

Smolenice Castle（2006）

Cited 0|Views2

No score

Abstract

Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control layer and a SiO2 or a Si3N4 tunnel layer. It was obtained that the charging behaviour of structures with SiO2 tunnel layer was better than with Si3N4 tunnel layer

Translated text

Key words

chemical vapour deposition,elemental semiconductors,nanostructured materials,random-access storage,silicon,silicon compounds,si3n4,sio2,electrical properties,embedded nanocrystals,low pressure chemical vapour deposition,memory properties,nonvolatile memory structures,non volatile memory

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined