Radical step coverage improvement in directional beam target (DBT) sputter

noble sputter with radical step coverage improvement using directional beam target technology is presented. Sidewall non-uniformity is +/-17% for 6:1 aspect ratio trench, which is a drastic improvement from the compared profiles of 300mm Endura CuBS PVD (SIP EnCoRe II Cu) +/-45.5% and INOVA(R) NExT (HCM(R) IONX(TM) XL) +/-40.3% without sacrificing other deposition characteristics. The technology can be scaled through proper ratio of DBT to meet future generation Cu technology. The system is also relatively simple configuration and is a good alternative solution.