SIMS Study of Modern Semiconductor Heterostructures.

S Gallardo,Yu A Kudriavtsev,A Villegas, A C Godinez,R Asomoza

Veracruz（2006）

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摘要

In this presentation we considered difficulties and perspective technique for SIMS depth profiling analysis of modern semiconductor heterostructures. Experimental measurements were performed with specially prepared samples: MBE grown delta AlGaAs layers in GaAs. It was found that primary ion induced atomic mixing in a near surface layer, and surface roughness, formed under ion irradiation, defines the final depth resolution. We performed an experimental study of parameters of the noticed physical phenomenon and found their dependence on the primary ion energy. The found results make it possible to perform deconvolution of experimental profiles and reproduce the original elemental distribution in these and similar heterostructures

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关键词

iii-v semiconductors,aluminium compounds,gallium arsenide,molecular beam epitaxial growth,secondary ion mass spectra,semiconductor epitaxial layers,semiconductor growth,semiconductor heterojunctions,surface roughness,algaas-gaas,mbe grown delta layers,sims depth profiling analysis,ion irradiation,primary ion energy,primary ion induced atomic mixing,semiconductor heterostructures,surface layer,depth resolution,heterostructures,ion mixing,recoil implantation,sims

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