K-band Carbon Nanotube FET Operation

Hong Zhang,Aaron A Pesetski,James E Baumgardner,J M Murduck,John X Przybysz,J D Adam

San Francisco, CA（2006）

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摘要

A top-gated carbon nanotube (CNT) field-effect transistor (FET) was fabricated on a quartz substrate using a single nanotube grown by CVD and a sputtered SixNy gate dielectric. Measurements of the mixing products produced by two closely spaced microwave input signals applied to the gate of the FET circumvented the problems associated with measuring high impedance RF devices in 50 Omega systems. The frequency-independent performance of a CNT FET, at frequencies as high as 23 GHz, was demonstrated for the first time. This observed operating frequency represents a significant breakthrough in the realization of carbon nanotube-based electronics for high frequency applications

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关键词

carbon nanotubes,chemical vapour deposition,microwave field effect transistors,sputtering,50 ohm,cvd,carbon nanotube,carbon nanotube-based electronics,field-effect transistor,microwave input signals,quartz substrate,radiofrequency devices,field effect transistor,measurement,microwave,mixer,high frequency,k band,impedance measurement,frequency

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