Hot carrier reliability of n-MOSFET with ultra-thin HfO2 gate dielectric and poly-Si gate
international reliability physics symposium（2002）
摘要
The hot carrier reliability of n-channel MOSFETs with 11 Å EOT HfO2 gate dielectric and poly-Si gates was studied. Under peak ISUB stress conditions, n-FETs with HfO2 gate dielectric show longer lifetime when compared to SiO2 n-FETs for the same stress substrate current. At room temperature, the 0.15 μm channel length HfO2 n-FETs are projected to have a 10-year lifetime at VD = 2.76 V.
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关键词
MOSFET,dielectric thin films,elemental semiconductors,hafnium compounds,hot carriers,semiconductor device reliability,semiconductor device testing,silicon,0.15 micron,10 year,11 angstrom,2.76 V,20 C,HfO2 gate dielectric,HfO2-Si,SiO2,current stress conditions,device operating life,hafnium oxide,hot carrier reliability,n-FET channel length,n-MOSFET,n-channel MOSFET,poly-Si gate,polysilicon gate,projected device lifetime,room temperature operation
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