A new flip-chip MMIC technology with multi-layer transmission line structure for low-cost W-band transceivers

Gallium Arsenide Integrated Circuit(2001)

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摘要
We developed for the first time a flip-chip multi-layer MMIC design technology that is based on thin-film inverted microstrip lines for use in low-cost W-band transceivers. This technology enables the minimization of chip size and the realization of a practical MMIC design, including the assembly issues in the W-band. A fabricated receiver amplifier occupying an area 1.5/spl times/0.35 mm experimentally achieved a gain of 27 dB and the transmitter power amplifier exhibited an output power of 14.5 dBm at 76 GHz, respectively. To our knowledge, this is the highest value ever reported at this frequency for a flip-chip multilayer MMIC amplifier.
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mmic amplifiers,flip-chip devices,microstrip circuits,millimetre wave amplifiers,transceivers,27 db,76 ghz,w-band transceiver,flip-chip mmic design technology,multilayer transmission line,receiver amplifier,thin film inverted microstrip line,transmitter power amplifier,thin film,transmission line,microstrip line,flip chip,chip,power amplifier
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