Design consideration for 2 kV SiC-SIT
Osaka（2001）
Abstract
Process technologies of the novel Static Induction transistor with source-gate self-aligned and overlapping (SAO) structures are considered in order to reduce the restrictions of alignment problems. A SiC-SIT with SAO structure is fabricated by using aluminum implantation for p gate on 4H n-type SiC. It is found that the SAO structure can be fabricated as expected by observing the cross sectional structure. Very low specific on-resistance of 39 mΩ cm2 is successfully obtained. By reducing a unit cell, lower on-resistance can be expected as a half of this work
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Key words
aluminium,ion implantation,power field effect transistors,silicon compounds,static induction transistors,wide band gap semiconductors,2 kv,sic static induction transistor,sic:al,aluminum implantation,cross-sectional structure,power device,source-gate self-aligned and overlapping structure,specific on-resistance,unit cell,fabrication,aluminum,epitaxial growth,low voltage,cross section,electron devices
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