Itfet: Inverted T Channel Fet, A Novel Device Architecture And Circuits Based On The Itfet.

L. Mathew,M. Sadd,S. Kalpat,M. Zavala,T. Stephens,R. Mora,R. Rai, C. Parker, J. Vasek,D. Sing,R. Shimer,L. Prabhu,G. O. Workman, G. Ablen, Z. Shi, J. Saenz, B. Min, David Burnett,B. -Y. Nguyen,J. Mogab,M. M. Chowdhury, W. Zhang,J. G. Fossum

Padova(2006)

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摘要
The ITFET is novel device architecture; it offers significant advantages over planar and FinFET technologies. The ITFET uses traditional CMOS processing technologies and can be rapidly inserted into existing SOI process flows. Doped channel ITFET devices have been demonstrated future work will include undoped channel ITFET devices. Simulated performances of the ITFET devices predict these devices can meet the 45nm and 32nm device performance. This transistor architecture offers device, process and application advantages
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关键词
field effect transistors
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