Large Signal Excitation Measurement Techniques for RTS Noise in MOSFETs

Computer as a Tool, 2005. EUROCON 2005.The International Conference（2005）

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摘要

This paper introduces large signal excitation measure- ment techniques to analyze Random Telegraph Signal (RTS) noise originating from oxide-traps in MOSFETs. The paper concentrates on the trap-occupancy, which relates directly to the generated noise. The proposed measurement technique makes trap-occupancy ob- servation possible for every bias-situation, including the OFF-state of the transistor. Keywords—MOSFET, Random Telegraph Signal (RTS) noise, LF noise, Large Signal Excitation, Transient.

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关键词

mosfet,hole traps,random noise,semiconductor device noise,rts noise,bias situation,noise generation,oxide traps,random telegraph signal,signal excitation,transistor off-state,trap occupancy,lf noise,large signal excitation,random telegraph signal (rts) noise,transient

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