Self-aligned AlInAs native oxidized buried hetero-structure InGaAsP/InP distributed feedback laser with circular beam and high T0 potential

Williamsburg, VA(2000)

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摘要
InGaAsP/InP self-aligned native oxidized buried heterostructure distributed feedback (SA-NOBH-DFB) laser is proposed. It is easy to process as ridge waveguide DFB laser and has a superior performance. The current aperture can be easily controlled without selective regrowth. Preliminarily, the laser exhibited a low threshold of 5.0 mA with 36 dB side mode suppression ratio (SMSR) at 1.562 μm. It shows a single transverse mode with full width at half maximum angles of 33.6° and 42.6° for the lateral and vertical fields, respectively. Its beam is move circular than that of the as-grown BH laser because the refractive index of oxide is lower than as-grown layer and results in larger lateral optical confinement. Its characteristic temperature (T0 ) is 50 K in average but it even becomes higher in high temperature region
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关键词
III-V semiconductors,distributed feedback lasers,gallium arsenide,indium compounds,laser modes,oxidation,semiconductor lasers,waveguide lasers,1.562 micron,5.0 mA,AlInAs,InGaAsP-InP,InGaAsP/InP SA-NOBH-DFB laser,characteristic temperature,circular beam,ridge waveguide,self-aligned native oxidized buried heterostructure distributed feedback laser,side mode suppression ratio,single transverse mode operation,threshold current
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