A thermally-stable sub-0.9nm EOT TaSix/HfSiON gate stack with high electron mobility, suitable for gate-first fabrciation of hp45 LOP devices

Seiji Inumiya,Yasushi Akasaka,Takeo Matsuki,Fumio Ootsuka,Kazuyoshi Torii,Yasuo Nara

Washington, DC（2005）

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摘要

We have realized a 0.9nm-EOT TaSix/HfSiON gate stack that exhibits the high electron mobility of 264 cm2/Vs @ 0.8MV/cm (86% of thermal SiO2), even after spike annealing at 1000degC. This was achieved by using thermally-stable HfSiON gate dielectrics with plasma nitridation, in which interfacial layer growth due to recoiled oxygen had been successfully suppressed

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关键词

dielectric thin films,electron mobility,hafnium compounds,low-power electronics,nitridation,nitrogen compounds,silicon alloys,tantalum alloys,thermal stability,1000 c,eot,tasi-hfsion,equivalent oxide thickness,gate dielectrics,gate stacks,gate-first fabrication,high electron mobility,hp45 lop devices,interfacial layer growth,plasma nitridation,spike annealing,low power electronics

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