Analysis of evolution to and beyond quasi-breakdown in ultra-thin oxide and oxynitride
San Jose, CA（2000）
Abstract
Evolution to quasi-breakdown with constant current stressing, annealing behavior and response to further post-quasi-breakdown stressing are observed in 30 Å (measured by ellipsometry) furnace grown oxide and oxynitride samples. The innate behavior of the dielectrics is clearly demonstrated in the wear-out/failure stage with these measurements and anneals. Devices tested are NMOS transistors with channel width of 15 μm and lengths ranging from 15 to 0.225 μm
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Key words
furnace grown oxide,0.225 to 15 mum,dielectric thin films,integrated circuit reliability,channel length,oxidation,leakage currents,fn stresses,annealing,ultra-thin dielectrics,dielectrics,gate leakage currents,semiconductor device breakdown,constant current stressing,annealing behavior,semiconductor device reliability,si-sion,cmos integrated circuits,failure analysis,ultra-thin oxynitride,oxynitride,si-sio2,ellipsometry,reliability,cmos technologies,eventual failure,mosfet,wearout,nmos transistors,failure stage,post-quasi-breakdown stressing,transistors,nitridation,performance,ultra-thin oxide,quasi-breakdown,channel width,30 angstrom,scattering,argon,art,simulated annealing,voltage,degradation
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