Narrow and broadband low-noise amplifiers at higher frequency using FDSOI CMOS technology

This work demonstrates the successful implementation of two single-stage low-noise amplifiers (LNAs) using 0.18 mum fully depleted silicon on insulator (FDSOI) CMOS technology. These two amplifiers utilize a metal T-gate n-MOSFET device for improved RF performance. The narrowband LNA has a measured gain of 8.2 dB, a noise figure (NF) of 1.5 dB and input referred third order intercept point (IIP3) value of 12.8 dBm at 3.2 GHz. The broadband LNA has yielded a gain of 7.6-4.5 dB and a NF of 2.8-3.0 dB across 5-10 GHz. The measured IIP3 is 15.4 dBm at 8 GHz. The narrowband amplifier consumes 28.5 mW and the broadband amplifier consumes 54.5 mW of power, both at Vgs = 0.75 V and Vds = 1.0 V. These two amplifiers have demonstrated the feasibility of FDSOI CMOS technology for phased array applications