Narrow and broadband low-noise amplifiers at higher frequency using FDSOI CMOS technology
San Diego, CA(2006)
Abstract
This work demonstrates the successful implementation of two single-stage low-noise amplifiers (LNAs) using 0.18 mum fully depleted silicon on insulator (FDSOI) CMOS technology. These two amplifiers utilize a metal T-gate n-MOSFET device for improved RF performance. The narrowband LNA has a measured gain of 8.2 dB, a noise figure (NF) of 1.5 dB and input referred third order intercept point (IIP3) value of 12.8 dBm at 3.2 GHz. The broadband LNA has yielded a gain of 7.6-4.5 dB and a NF of 2.8-3.0 dB across 5-10 GHz. The measured IIP3 is 15.4 dBm at 8 GHz. The narrowband amplifier consumes 28.5 mW and the broadband amplifier consumes 54.5 mW of power, both at Vgs = 0.75 V and Vds = 1.0 V. These two amplifiers have demonstrated the feasibility of FDSOI CMOS technology for phased array applications
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Key words
cmos integrated circuits,mmic amplifiers,mosfet,low noise amplifiers,silicon-on-insulator,wideband amplifiers,0.18 micron,0.75 v,1 v,1.5 db,2.8 to 3 db,28.5 mw,3.2 ghz,5 to 10 ghz,54.5 mw,7.6 to 4.5 db,8.2 db,fdsoi cmos technology,broadband low-noise amplifiers,fully depleted silicon on insulator,metal t-gate n-mosfet device,narrowband low-noise amplifiers,phased array applications,low noise amplifier,noise figure,phased array,silicon on insulator
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