Ion implantation into silica fibers and metal wires

Kajiyama, Kenji, Sekine, Kohei,Yoneda, Tomoaki, Shibauchi, T.

Ion Implantation Technology Proceedings, 1998 International Conference（1999）

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摘要

Boron ions were uniformly implanted into silica fibers, and Cu and Al wires of ~125 μm φ. Implantation energy was 100 keV and nominal dose was 1×1016/cm2. Samples were rotated on their axes for uniform implantation. Boron depth profiles were measured by the Secondary-Ion Mass Spectroscopy and was compared with calculated results. Sample temperature rise during implantation was estimated by thermo-couple measurement and its result was compared with calculated results

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aluminium,boron,buried layers,copper,doping profiles,ion implantation,secondary ion mass spectra,silicon compounds,100 keV,Al:B,Cu:B,Secondary-Ion Mass Spectroscopy,SiO2:B,implantation energy,ion implantation,metal wires,silica fibers,thermo-couple measurement,

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