Self aligned AlInAs native oxidized current aperture buried heterostructure InGaAsP/InP distributed feedback laser

Wang Zhijie,Chua Soojin,Wang Wei,Zhou Fan,Zhang Jingyuan,Wang Xiaojie

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting（1999）

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摘要

An InGaAsP/InP self-aligned native oxidized buried heterostructure distributed feedback laser has been successfully developed. It exhibited a low threshold of 5.0 mA with 36 dB SSMR at 1.56 μm. The laser's high temperature performance is superior to the conventional BH laser with p-n reverse biased junction

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关键词

iii-v semiconductors,aluminium compounds,distributed feedback lasers,gallium arsenide,indium compounds,oxidation,quantum well lasers,1.56 mum,5.0 ma,alinas,alinas native oxidized current aperture,ingaasp-inp,ingaasp/inp self-aligned native oxidized buried heterostructure distributed feedback laser,high temperature performance,low threshold,distributed feedback laser,apertures,temperature

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