Characteristics of microwave detectors with low barrier planar Schottky diodes

V I Shashkin,V L Vaks,V M Daniltsev,A V Maslovsky,A V Murel,S D Nikiforov,Yu I Chechenin

Microwave & Telecommunication Technology, 2005 15th International Crimean Conference（2005）

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摘要

The design principles and technology of fabricating sensitive microwave detectors on the basis of low barrier (0.2-0.3 eV) Schottky diodes are developed. A family of diodes and diode-based broadband detectors featuring 1000-5000 V/W sensitivity and 10-11 W Hz -1/2 threshold power at millimeter wavelengths and zero-bias operation are fabricated

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关键词

schottky diodes,microwave detectors,millimetre wave detectors,schottky diode,diode-based broadband detector,microwave detector,millimeter wavelength,zero-bias operation

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