C-V and gate tunneling current characterization of ultra-thin gate oxide MOS (t/sub ox/=1.3-1.8 nm)
Kyoto, Japan（1999）
Abstract
Direct tunneling of ultra-thin gate oxides results in exponential increases in gate leakage current (Lo et al, 1997). Moreover, the loss of inversion charge due to the carrier quantization then becomes significant. Hence, more physically accurate models are urgently needed. In this paper, an equivalent circuit approach considering the gate tunneling current as well as other QM effects is presented to characterize these phenomena for gate oxide thicknesses ranging from 1.3-1.8 nm.
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Key words
cmos integrated circuits,dielectric thin films,equivalent circuits,integrated circuit measurement,integrated circuit modelling,leakage currents,quantum interference phenomena,tunnelling,1.3 to 1.8 nm,c-v characterization,cmos technology,qm effects,sio/sub 2/-si,carrier quantization,direct tunneling,equivalent circuit approach,gate leakage current,gate oxide thickness,gate tunneling current,gate tunneling current characterization,inversion charge loss,physically accurate models,ultra-thin gate oxide mos,ultra-thin gate oxides,equivalent circuit,tunneling,capacitance,semiconductor device modeling,leakage current
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