Delamination of thin Si layer in the H+ implanted Si for the manufacture of SOI Si wafer-fundamental phenomena and the properties of the delaminated Si layers

Beijing（1998）

引用 0|浏览2

暂无评分

摘要

This paper reviews the delamination of thin Si layer in H+ implanted Si layers. Layer properties of the device Si layer were measured by minority carrier lifetime technique

查看译文

关键词

carrier lifetime,delamination,elemental semiconductors,hydrogen,ion implantation,minority carriers,proton effects,silicon,silicon compounds,silicon-on-insulator,H+ implanted Si,H+ implanted Si layers,SOI Si wafer,Si:H-SiO2,delaminated Si layers,delamination,minority carrier lifetime technique,review,thin Si layer

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要