Detection of THz electromagnetic radiation with Si/SiGe HFET

S Richard,N Zerounian,P Boucaud,J M Ortega,T Hackbarth,H J Herzog,F Aniel

Proceedings of 35th European Solid-State Device Research Conference, 2005 ESSDERC 2005（2005）

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Abstract

We report an investigation on THz signal detection using plasma instabilities in two-dimensional electron gas of a tensile strained silicon quantum well of Si/SiGe hetero-FET. It is, to our knowledge, the first measurements of THz nonlinear behaviour in such silicon-based devices. We discuss the key parameters which are controlling detection and oscillation in THz range. It appears that strained channel Si-based devices are well suited for such applications.

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Key words

ge-si alloys,elemental semiconductors,high electron mobility transistors,semiconductor quantum wells,signal detection,silicon,submillimetre wave propagation,submillimetre wave transistors,submillimetre waves,sige-si,thz signal detection,electromagnetic radiation detection,electron gas,heterofet,plasma instabilities,silicon quantum well,oscillations,quantum well,electromagnetic radiation,two dimensional electron gas

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