980 nm Al-free ridge waveguide distributed feedback lasers with lateral gain coupling

M Kamp,J Hofmann, A Forchel, M Krakowski,D Rondi, J L Guyaux, E Chirlias,G Glastre,R Blondeau

Davos（1999）

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摘要

We present Al-free gain-coupled lasers emitting at 980 nm with metal gratings patterned laterally to the laser waveguide. The process is based on standard ridge waveguide fabrication and requires no regrowth. For a sufficiently small waveguide, the evanescent field of the laser mode couples to the lateral grating. Ridge waveguide lasers were processed from an MOCVD grown Al free laser structure with a single InGaAs quantum well. The cw threshold currents are around 17 mA for a 1 mm long laser, differential efficiencies are 0.2 W/A. Monomode emission up to output power levels of 25 mW and sidemode suppression ratios of 45 dB have been obtained. The lasers are monomode over a wide range of temperature and current, indicating that the lateral coupling is sufficiently strong for stable DFB operation

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关键词

iii-v semiconductors,mocvd,distributed feedback lasers,gallium arsenide,indium compounds,laser modes,laser stability,laser transitions,quantum well lasers,ridge waveguides,semiconductor growth,waveguide lasers,1 mm,17 ma,25 mw,980 nm,al-free ridge waveguide distributed feedback lasers,ingaas,ingaas quantum well lasers,mocvd grown,cw threshold currents,differential efficiencies,evanescent field,laser mode coupling,laser waveguide,lateral coupling,lateral gain coupling,lateral grating,metal gratings,output power levels,patterned laterally,ridge waveguide lasers,sidemode suppression ratios,single ingaas quantum well,small waveguide,stable dfb operation,standard ridge waveguide fabrication,distributed feedback laser,quantum well

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