A 77 GHz SiGe sub-harmonic balanced mixer

Solid-State Circuits, IEEE Journal of(2005)

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摘要
A novel SiGe 77 GHz sub-harmonic balanced mixer is presented with a goal to push the technology to its limit [SiGe2-RF transistor (fT=80 GHz)]. This new topology uses a compact input network not only to achieve high isolation between the LO and RF ports, but also to result in excellent 2LO-RF isolation. The measured results demonstrate a conversion gain of 0.7 dB at 77 GHz with an LO power of 10 dBm at 38 GHz, LO-RF isolation better than 30 dB, 2LO-RF isolation of 25 dB, and a P1dB of -8 dBm. The mixer core consumes 4.4 mA at 5 V. The circuit demonstrates that SiGe sub-harmonic mixers have comparable performance with GaAs designs, at a fraction of the cost.
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Ge-Si alloys,MMIC mixers,coplanar waveguides,integrated circuit design,millimetre wave integrated circuits,millimetre wave mixers,0.7 dB,38 GHz,4.4 mA,5 V,77 GHz,80 GHz,LO ports,RF ports,RF transistor,SiGe,coplanar waveguides,isolation,millimeter-wave mixer,monolithic microwave integrated circuits,network topology,sub-harmonic balanced mixer,Coplanar waveguides (CPWs),SiGe,millimeter-wave mixer,monolithic microwave integrated circuits (MMICs),sub-harmonic balanced mixer
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