Production InP MMICs for low cost, high performance applications

R Lai,R Grundbacher,Donald Sawdai,Josef C Uyeda,M Biedenbender,M Barsky,Augusto Gutierrezaitken,A Cavus,P Chin,P H Liu, R Bhorania,D C Streit,A K Oki

Glasgow, Scotland（2005）

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摘要

We report the progress of production InP MMICs for low cost, high performance applications at Northrop Grumman Space Technology (NGST). Both InP HEMT and HBT technologies are being developed on 100 mm diameter InP substrates and this development is leading to lower costs that will rival both GaAs-based MMICs including GaAs-based metamorphic technologies with superior performance. Two specific InP niche product areas will be discussed-high linearity InP HBT power amplifiers and high frequency W-band low noise amplifiers

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关键词

hemt integrated circuits,iii-v semiconductors,mmic power amplifiers,heterojunction bipolar transistors,indium compounds,gaas-based mmics,gaas-based metamorphic technologies,inp,inp hbt power amplifiers,inp hemt technology,inp substrates,high frequency w-band low noise amplifiers,production inp mmics,high frequency,power amplifier,production,linearity,space technology,low noise amplifier

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