Vertical Scaling Of Planarized Inp/Ingaas Heterojunction Bipolar Transistors With F(T) > 350 Ghz And F(Max) > 500 Ghz

D Sawdai,Pc Chang,V Gambin,X Zeng,J Wang, M Barsky,B Chan,B Oyama,A Gutierrez-Aitken,A Oki

2005 International Conference on Indium Phosphide and Related Materials（2005）

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摘要

A dielectric planarization process was developed which enabled aggressive scaling of both emitter area and base-collector capacitance. Transistors were fabricated with emitters as small as 0.14 mu m, with the fastest HBTs using 0.4-mu m emitters.

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关键词

III-V semiconductors,dielectric polarisation,gallium arsenide,heterojunction bipolar transistors,indium compounds,0.14 micron,0.4 micron,350 GHz,500 GHz,HBT fabrication,InP-InGaAs,InP-InGaAs heterojunction bipolar transistors,base-collector capacitance,dielectric planarization process,emitter area,vertical scaling

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