Direct beam lead bonding for trench MOSFET & CSTBT
ieee(2005)
摘要
The next innovation in the power modules has come up with the corroboration between the power chip technology like CSTBT and die packaging technology like the direct transfer mold module, via wireless bonding technology, that is our technology "direct beam lead bonding (DBLB)". In this paper, we report the electrical characteristics and the reliabilities of a MOSFET and a CSTBT using DBLB. The DBLB type MOSFETs on-state resistance (RDS(GN)) can be reduced in 16% comparing with die conventional aluminum (Al) wire bonding type and an avalanche ruggedness (EAVA) during undamped inductive switching (UIS) is unproved approximately 2 times. It has the excellent reliability under the thermal cycling test between 233K and 398K during over 3000 cycles. Further, the DBLB type CSTBT has, under the short circuit safety operation area (SCSOA) test condition, 11% greater toughness as energy than the Al wiring type.
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关键词
electron beam applications,electronics packaging,lead bonding,power mosfet,power bipolar transistors,semiconductor device reliability,cstbt,avalanche ruggedness,carrier stored tranch gate bipolar transistor,die packaging technology,direct beam lead bonding,electrical characteristics,heat treatment,power modules,semiconductor technology,short circuit safety operation area,trench mosfet,undamped inductive switching,wireless bonding technology,packaging,thermal cycling,electric resistance,chip,aluminum
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