Erratum.

S Matsuda,M Omoto, T Imai, K Seki,R Nomura, Y Otahara, T Yoshida,S Shima,H Kurita,K Nagaoka,H Taniwaki, Y Asada, K P Shai, M Koike, K Morita, Y Watanabe, H Mizoguchi,K Masamura, T Nagaya,R Inaba, H Sugiura, H Iwata, T Tanaka,G Ohi,I Uemura,A Akabayashi,I Kai, M Miyasaka, K Naka

Journal of chemical ecology（1998）

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Abstract

In the letter "High-Efficiency GaInAs Microwave MISFET??s," by P.D. Gardner et al., in IEEE Electron Device Letters,vol. EDL-8, pp. 443-446, September 1987, please note the following correction in the Acknowledgment section: "The authors are gratefill to Dr. F. Sterzer for his support of this project and to F. Duigon for his contributions to the development of the SAG MISFET structure."

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Key words

Electron devices,MISFETs

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