High Performance Buried Heterostructure 1.55 Μm Wavelength AlGaInAs/InP Multiple Quantum Well Lasers Grown Entirely by MOVPE Technique
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS（1998）
关键词
III-V semiconductors,MOCVD,aluminium compounds,gallium arsenide,indium compounds,internal stresses,quantum well lasers,semiconductor growth,semiconductor quantum wells,vapour phase epitaxial growth,1.5 mum,1.55 mum,10 mA,545 mum,AlGaInAs-InP,AlGaInAs/InP,MOVPE layers,buried heterostructure strained MQW laser,cavity length,characterization,compressive strain,differential modal gain,fabrication,threshold current density
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