Ruthenium a new thermally stable compensator in InP

A Dadgar,O J Stenzel,L Kohne,A M Naser,Martin Strassburg,W Stolz,H J Schumann,D Bimberg

Tsukuba（1998）

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摘要

Semiinsulating InP has been grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) using different P- and Ru-precursors. Studies of the Ru diffusion coefficient yield, that Ru is a thermally highly stable dopant with a diffusion coefficient of DRu(800°C)⩽1×10-15 cm2/s. Additionally Ru shows no unwanted interdiffusion with p-type dopants. From deep level transient spectroscopy (DLTS) measurements we conclude, that Ru introduces several deep centers in InP which are suited to compensate electrons as well as holes. Resistivities above 5×10 7 Ω cm and 5×108 Ω cm have been achieved under electron and hole injection conditions, respectively

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关键词

iii-v semiconductors,mocvd coatings,deep level transient spectroscopy,deep levels,diffusion,indium compounds,ruthenium,semiconductor thin films,5e7 ohmcm,5e8 ohmcm,800 c,inp:ru,lp-mocvd,deep centers,diffusion coefficient yield,electron injection,hole injection,low pressure metalorganic chemical vapor deposition,resistivities,thermally stable compensator,zinc,heat treatment,temperature,spectroscopy,iron,low pressure,doping,diffusion coefficient

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