Bandgap renormalization studies of n-type GaAs/AlGaAs single quantum wells

E D Jones,M A Blount,Wongho Chow,H Hou,James A Simmons

San Diego, CA（1998）

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摘要

Bandgap energy renormalization due to many body effects has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K. The 2D-carrier densities varied between 1 and 12×1011 cm-2. At the maximum 2D-carrier density, the bandgap energy reduction compared to an undoped specimen was found to be about 34 meV

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关键词

iii-v semiconductors,aluminium compounds,energy gap,gallium arsenide,interface states,magneto-optical effects,photoluminescence,renormalisation,semiconductor quantum wells,1.4 k,2d-carrier densities,34 mev,8 nm,gaas-algaas,bandgap energy reduction,bandgap renormalization,magnetoluminescence spectroscopy,many body effects,n-type gaas/algaas single quantum wells,shape,temperature measurement,semiconductor lasers,carrier density,photonic band gap,materials science,fiber lasers,optical fibers

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