The Impact of Uniaxial Strain Engineering on Channel Backscattering in Nanoscale MOSFETs

HN Lin,HW Chen,CH Ko,CH Ge, HC Lin, TY Huang, WC Lee,DD Tang

semanticscholar（2005）

Cited 11|Views7

Key words

MOSFET,carrier mean free path,electron backscattering,nanoelectronics,carrier channel backscattering,mean-free-path,nanoscale MOSFET,reduced carrier effective mass,source-side injection velocity,strain-induced modulation,uniaxial compressive strain,uniaxial process-induced strain,uniaxial strain engineering,uniaxial tensile strain

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