The 4500 V-750 A planar gate press pack IEGT
Kyoto（1998）
Abstract
This paper presents the 4500 V-750 A planar gate injection enhanced gate transistor (P-IEGT), which has a wide cell width. By increasing the gate width, the planar devices achieve the carrier injection enhancement effect. The wide gate structure shows better characteristics for high voltage planar devices than the conventional IGBT. The on-state voltage drop is 3.8 V at 50 A/cm2, Tj =25°C. The value is low enough for a 4500 V rated MOS gate transistor. We achieve turn off capability at Vce (peak)=4000 V, Ic=1600 A without adding a dV/dt snubber at Tj=125°C. The results show that the P-IEGT has a very wide SOA
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Key words
carrier mobility,insulated gate bipolar transistors,power bipolar transistors,semiconductor device packaging,semiconductor device testing,125 c,1600 a,25 c,3.8 v,4000 v,4500 v,750 a,igbt,mos gate transistor,p-iegt,p-iegt soa,carrier injection enhancement effect,cell width,dv/dt snubber,gate width,high voltage planar devices,on-state voltage drop,planar devices,planar gate injection enhanced gate transistor,planar gate press pack iegt,turn-off capability,wide gate structure,high voltage,low voltage,semiconductor devices,electron emission,charge carrier density,thyristors
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