Ionizing Dose Hardness Assurance Methodology For Qualification Of A Bicmos Technology Dedicated To High Dose Level Applications

O Flament,O Musseau,Jl Leray, E Dutisseuil,T Corbiere

Cannes（1998）

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摘要

This work concerns the development of a radiation hardness assurance methodology specially devoted to CMOS, JFET and bipolar transistors used in high total dose level environments. On the basis of recent studies, high temperature, high dose rate irradiations were performed. We propose a test procedure which combines high temperature irradiations and isochronal anneals far the qualification.

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关键词

BiCMOS integrated circuits,MOSFET,annealing,bipolar transistors,high-temperature electronics,integrated circuit testing,junction gate field effect transistors,radiation hardening (electronics),semiconductor device testing,BiCMOS technology,CMOS transistor,JFET,bipolar transistor,high temperature irradiation,ionizing dose,isochronal annealing,qualification,radiation hardness assurance testing

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