Control Of Point Defects And Arsenic Clusters In Low-Temperature Grown Gaas By Isovalent Impurity Doping

Vv Chaldyshev,Na Bert,Nn Faleev, Ae Kunitsyn,Yg Musikhin,Vv Preobrazhenskii,Ma Putyato,Br Semyagin, P Werner

London（1997）

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摘要

We show that isovalent indium impurity doping can be employed to control excess-arsenic-related point defects and arsenic clusters in GaAs films grown by molecular-beam epitaxy at low temperature. In respect of arsenic excess, indium doping was found to be equivalent to a decrease in the growth temperature, however, it provided better crystalline quality of the material. Indium delta-doping was used to create two-dimensional sheets of arsenic clusters in the GaAs matrix. We demonstrate a 30-period superlattice of two-dimensional cluster sheets separated by cluster-free spacers and two cluster sheets sandwiched between n- and p-GaAs layers grown at conventional temperature.

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关键词

III-V semiconductors,electron probe analysis,gallium arsenide,impurity-defect interactions,indium,molecular beam epitaxial growth,point defects,precipitation,semiconductor doping,semiconductor epitaxial layers,semiconductor superlattices,transmission electron microscopy,30-period superlattice,As cluster control,As precipitation,EPMA,GaAs films,GaAs:In,In delta-doping,antisite defects,crystalline quality,growth temperature,high resolution TEM,isovalent impurity doping,low temperature growth,molecular-beam epitaxy,point defect control,two-dimensional cluster sheets,two-dimensional sheets,

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